Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 32, Issue 2, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4861352
Keywords
-
Funding
- National Natural Science Foundation of China [61372018]
Ask authors/readers for more resources
Amorphous In-Ga-Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 degrees C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400-800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors. (C) 2014 American Vacuum Society.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available