4.5 Review

Electronic surface and dielectric interface states on GaN and AlGaN

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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)

Article Engineering, Electrical & Electronic

The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs

R Vetury et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)

Article Physics, Applied

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

EJ Miller et al.

JOURNAL OF APPLIED PHYSICS (2000)

Article Physics, Applied

Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

JW Johnson et al.

APPLIED PHYSICS LETTERS (2000)

Article Physics, Applied

Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

U Karrer et al.

APPLIED PHYSICS LETTERS (2000)

Article Physics, Applied

Hydrogen passivation of deep levels in n-GaN

A Hierro et al.

APPLIED PHYSICS LETTERS (2000)

Article Electrochemistry

Surface chemical treatment for the cleaning of AlN and GaN surfaces

KN Lee et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2000)

Article Crystallography

Electronic structures of hexagonal ZnO/GaN interfaces

T Nakayama et al.

JOURNAL OF CRYSTAL GROWTH (2000)

Article Engineering, Electrical & Electronic

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's

BM Green et al.

IEEE ELECTRON DEVICE LETTERS (2000)

Article Engineering, Electrical & Electronic

Band offsets of wide-band-gap oxides and implications for future electronic devices

J Robertson

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)

Article Nanoscience & Nanotechnology

Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

R Nakasaki et al.

PHYSICA E (2000)

Article Engineering, Electrical & Electronic

Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

M Hong et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)

Article Engineering, Electrical & Electronic

Surface recombination and sulfide passivation of GaN

GL Martinez et al.

JOURNAL OF ELECTRONIC MATERIALS (2000)