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Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films
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JOURNAL OF APPLIED PHYSICS (2004)
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
CJ Kao et al.
APPLIED PHYSICS LETTERS (2004)
Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
T Hashizume et al.
APPLIED SURFACE SCIENCE (2004)
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2004)
Leakage mechanism in GaN and AlGaN schottky interfaces
T Hashizume et al.
APPLIED PHYSICS LETTERS (2004)
Surface-related drain current dispersion effects in AlGaN-GaNHEMTs
G Meneghesso et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
Band offset measurements of the GaN (0001)/HfO2 interface
TE Cook et al.
JOURNAL OF APPLIED PHYSICS (2003)
Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
T Hashizume et al.
APPLIED PHYSICS LETTERS (2003)
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
T Mizutani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Band offset measurements of the Si3N4/GaN (0001) interface
TE Cook et al.
JOURNAL OF APPLIED PHYSICS (2003)
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
KM Tracy et al.
JOURNAL OF APPLIED PHYSICS (2003)
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
EP Gusev et al.
MICROELECTRONIC ENGINEERING (2003)
Optimization and characterization of III-V surface cleaning
Z Liu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
H Kim et al.
IEEE ELECTRON DEVICE LETTERS (2003)
Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
H Hasegawa et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
T Hashizume et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure
T Inagaki et al.
APPLIED SURFACE SCIENCE (2003)
Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN
CT Lee et al.
APPLIED PHYSICS LETTERS (2003)
Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
S Karmalkar et al.
APPLIED PHYSICS LETTERS (2003)
Investigation of accumulated carrier mechanism on sulfurated GaN layers
YJ Lin et al.
JOURNAL OF APPLIED PHYSICS (2003)
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R Mehandru et al.
APPLIED PHYSICS LETTERS (2003)
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
TE Cook et al.
JOURNAL OF APPLIED PHYSICS (2003)
Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
B Luo et al.
APPLIED PHYSICS LETTERS (2003)
High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior
W Saito et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN
KA Rickert et al.
JOURNAL OF APPLIED PHYSICS (2002)
Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
WJ Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Simple method for cleaning gallium nitride (0001)
F Machuca et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2002)
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
XA Cao et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Large gate leakage current in AlGaN/GaN high electron mobility transistors
S Mizuno et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2002)
Mechanism of anomalous current transport in n-type GaN Schottky contacts
H Hasegawa et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
HW Jang et al.
APPLIED PHYSICS LETTERS (2002)
Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride
Z Jin et al.
APPLIED SURFACE SCIENCE (2002)
Mechanism of current leakage through metal/n-GaN interfaces
S Oyama et al.
APPLIED SURFACE SCIENCE (2002)
Characterization of metal/GaN Schottky interfaces based on I-V-T characteristics
T Sawada et al.
APPLIED SURFACE SCIENCE (2002)
Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution
JO Song et al.
APPLIED PHYSICS LETTERS (2002)
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
WS Tan et al.
APPLIED PHYSICS LETTERS (2002)
Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors
WS Tan et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2002)
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B Luo et al.
APPLIED PHYSICS LETTERS (2002)
GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation
DJ Fu et al.
APPLIED PHYSICS LETTERS (2002)
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
PB Klein et al.
APPLIED PHYSICS LETTERS (2001)
Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
X Hu et al.
APPLIED PHYSICS LETTERS (2001)
Sputtering and etching of GaN surfaces
YH Lai et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2001)
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
DS Li et al.
JOURNAL OF APPLIED PHYSICS (2001)
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
TS Lay et al.
SOLID-STATE ELECTRONICS (2001)
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
A Zoroddu et al.
PHYSICAL REVIEW B (2001)
Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
I Costina et al.
APPLIED PHYSICS LETTERS (2001)
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors
JW Johnson et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2001)
Band alignment at a ZnO/GaN (0001) heterointerface
SK Hong et al.
APPLIED PHYSICS LETTERS (2001)
Accurate calculation of polarization-related quantities in semiconductors
F Bernardini et al.
PHYSICAL REVIEW B (2001)
Surface characterization of GaN and AlGaN layers grown by MOVPE
T Hashizume et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
The impact of surface states on the DC and RF characteristics of A1GaN/GaN HFETs
R Vetury et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
EJ Miller et al.
JOURNAL OF APPLIED PHYSICS (2000)
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
JW Johnson et al.
APPLIED PHYSICS LETTERS (2000)
Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
U Karrer et al.
APPLIED PHYSICS LETTERS (2000)
Hydrogen passivation of deep levels in n-GaN
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
T Hashizume et al.
JOURNAL OF APPLIED PHYSICS (2000)
Surface chemical treatment for the cleaning of AlN and GaN surfaces
KN Lee et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2000)
Electronic structures of hexagonal ZnO/GaN interfaces
T Nakayama et al.
JOURNAL OF CRYSTAL GROWTH (2000)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
BM Green et al.
IEEE ELECTRON DEVICE LETTERS (2000)
X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution
T Hashizume et al.
APPLIED PHYSICS LETTERS (2000)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
R Nakasaki et al.
PHYSICA E (2000)
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
M Hong et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Surface recombination and sulfide passivation of GaN
GL Martinez et al.
JOURNAL OF ELECTRONIC MATERIALS (2000)