Related references
Note: Only part of the references are listed.Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers
Nasir Alimardani et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
High Performance Metal-Insulator-Metal Capacitors with Er2O3 on ALD SiO2 for RF Applications
Thanh Hoa Phung et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Atomic-Layer-Deposited Dielectric Thin Films on a Cu Clad Laminate Substrate for Embedded Metal-Insulator-Metal Capacitor Applications in Printed Circuit Boards
Tae Joo Park et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
H. B. Profijt et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2011)
Temperature dependence of TaAlOx metal-insulator-metal capacitors
M. K. Hota et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer
B. Hudec et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications
A. Krause et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Applicability of molecular beam deposition for the growth of high-k oxides
Matthias Grube et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors
M. P. J. Tiggelman et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
Jiro Yota
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Influence of the electrode material on HfO2 metal-insulator-metal capacitors
Ch. Wenger et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition
Kaupo Kukli et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
S. B. S. Heil et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2008)
Variable frequency microwave and convection furnace curing of polybenzoxazole buffer layer for GaAsHBT technology
Jiro Yota et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2007)
Very high density (44 fF/μm2) SrTiO3 MIM capacitors for RF applications
K. C. Chiang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)
Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications
Cheng-Shih Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High-performance SrTiO3 MIM capacitors for analog applications
K. C. Chiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Metal-insulator-metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
C Durand et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2004)
High dielectric constant oxides
J Robertson
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
SB Chen et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition
D Suh et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films
J Yota et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2000)