Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 28, Issue 5, Pages 1111-1114Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3460905
Keywords
-
Funding
- Ministry of Education, Science and Technology [2009-0082604]
- National Research Foundation of Korea [2009-0082604] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
A zinc-metal dopant-oxygen precursor exposure cycle is demonstrated as a modified deposition procedure for better distribution of Al-dopants in ZnO films by atomic layer deposition with the aim to reduce the formation of nanolaminate thin films that might form with the typically used alternating ZnO and metal oxide deposition procedure. The distribution and chemical bonding states of Al-dopants were studied with various dopant deposition intervals of Zn-Al-O precursor and Zn-O cycles at 1::4, 1::9, 1::14, and 1::19 ratios. The smallest resistivity of Al-doped ZnO film without degradation of transparency was obtained at 250 degrees C with 5.37 x 10(-4) Omega cm. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3460905]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available