4.5 Article

Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 27, Issue 3, Pages 461-464

Publisher

A V S AMER INST PHYSICS
DOI: 10.1116/1.3106610

Keywords

aluminium compounds; electron diffraction; insulating thin films; lanthanum compounds; molecular beam epitaxial growth; stoichiometry; strontium compounds; surface reconstruction; surface roughness; X-ray diffraction

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A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO3 films were investigated as a function of cation flux ratio on (001) SrTiO3 and (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34 arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed.

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