Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 27, Issue 5, Pages 1166-1171Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3186618
Keywords
aluminium; doping profiles; heating; II-VI semiconductors; semiconductor thin films; sputter deposition; texture; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction; zinc compounds
Funding
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan
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Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degrees C under incident angles of sputtered particles at 0 degrees (incidence normal to substrate), 20 degrees, 40 degrees, 60 degrees, and 80 degrees. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degrees, the [001] orientation inclined by 25 degrees-35 degrees toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.
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