4.5 Article

Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 27, Issue 1, Pages 57-62

Publisher

A V S AMER INST PHYSICS
DOI: 10.1116/1.3032915

Keywords

annealing; photoluminescence; scanning electron microscopy; silicon compounds; surface roughness; thin films; transmission electron microscopy

Funding

  1. Consejo Nacional de Ciencia y Tecnologia (CONACYT)

Ask authors/readers for more resources

It is well known that silicon-rich oxide (SRO) shows intense photoluminescence (PL). In this work, the authors studied the relationship of the surface morphology and the PL emission. PL spectra of SRO as a function of the excess silicon, temperature, and time of thermal annealing were obtained. The same samples were studied using transmission electronic microscopy and atomic force microscopy to determine their microstructure and surface morphology. A relationship between silicon agglomerates in the SRO and the surface morphology was obtained. Then, the red PL emission was related to the surface morphology. The authors found that the surface roughness is an important parameter for the high red emission of SRO.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available