Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4928537
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [51472150, 51472145, 51272133]
- Shandong Natural Science Foundation [ZR2013MM016]
- National 111 Project [B13029]
Ask authors/readers for more resources
The Ag/TiO2/Nb:SrTiO3/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO2/Nb: SrTiO3/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO2/Nb:SrTiO3. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO2. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
