Related references
Note: Only part of the references are listed.Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application
Xinglong Ji et al.
APPLIED PHYSICS LETTERS (2015)
Study on the nitrogen-doped W-Sb-Te material for phase change memory application
Kun Ren et al.
APPLIED PHYSICS LETTERS (2014)
Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
Min Zhu et al.
APPLIED PHYSICS LETTERS (2014)
Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory
Kun Ren et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2014)
Crystallization properties of materials along the pseudo-binary line between GeTe and Sb
Huai-Yu Cheng et al.
JOURNAL OF APPLIED PHYSICS (2014)
Phase change materials and phase change memory
Simone Raoux et al.
MRS BULLETIN (2014)
Superlattice-like Ge8Sb92/Ge thin fins for high speed and low power consumption phase change memory application
Yifeng Hu et al.
SCRIPTA MATERIALIA (2014)
Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
Yifeng Gu et al.
APPLIED PHYSICS LETTERS (2013)
Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application
Yifeng Hu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2013)
Al19Sb54Se27 material for high stability and high-speed phase-change memory applications
Yifeng Hu et al.
SCRIPTA MATERIALIA (2013)
Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film
Yuta Saito et al.
APPLIED PHYSICS LETTERS (2012)
Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
Kun Ren et al.
APPLIED PHYSICS LETTERS (2012)
Breaking the Speed Limits of Phase-Change Memory
D. Loke et al.
SCIENCE (2012)
Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application
Xilin Zhou et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures
Desmond Loke et al.
NANOTECHNOLOGY (2011)
The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5
Huai-Yu Cheng et al.
JOURNAL OF APPLIED PHYSICS (2010)
Nanoscale Thermal Response in ZnO Varistors by Atomic Force Microscopy
Zhao Kun-Yu et al.
CHINESE PHYSICS LETTERS (2009)
Characterization Method of Polycrystalline Materials Using Conductive Atomic Force Microscopy
Ding Xi-Dong et al.
CHINESE PHYSICS LETTERS (2008)
All-carbon nanoswitch based on C70 molecule:: A first principles study
Fangping OuYang et al.
JOURNAL OF APPLIED PHYSICS (2007)
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
Daniele Ielmini et al.
JOURNAL OF APPLIED PHYSICS (2007)