Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4939149
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Funding
- Natural Science Foundation of Jiangsu Province [BK2015020024]
- Basic Research Program of Jiangsu Education Department [15KJB430012]
- Changzhou Science and Technology Bureau [CJ20159049]
- Open Fund of State Key Laboratory of Functional Materials for Informatics [KYZ14031]
- Scientific Research Fund Project of Jiangsu University of Technology [KYY14014]
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In order to improve the operation speed of phase change memory (PCM), superlattice-like Ge2Sb2Te5/Sb (SLL GST/Sb) thin films were prepared in a sputtering method to explore the suitability as an active material for PCM application. Compared with GST, SLL GST/Sb thin film has a lower crystallization temperature, crystallization activation energy, thermal conductivity, and smaller crystalline grain size. A faster SET/RESET switching speed (10 ns) and a lower operation power consumption (the energy for RESET operation 9.1 x 10(-13) J) are obtained. In addition, GST/Sb shows a good endurance of 8.3 x 10(4) cycles. (C) 2015 AIP Publishing LLC.
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