Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4909515
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Funding
- DFG [SPP 1391, Li580/8-1]
- EU project CRONOS [280879-2]
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The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 mu m telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology. (C) 2015 AIP Publishing LLC.
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