Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4926973
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- MEXT
- Japan Society for the Promotion of Science (JSPS)
- Institute of Industrial Science, The University of Tokyo
- JSPS Research Fellowship for Young Scientists
- Grants-in-Aid for Scientific Research [25107003, 14J09475] Funding Source: KAKEN
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We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10(5). These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications. (C) 2015 AIP Publishing LLC.
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