Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4921921
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- Alexander von Humboldt Foundation
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Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, starshaped islands to larger, smooth triangular ones with increasing growth temperature. (C) 2015 AIP Publishing LLC.
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