Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4930310
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Funding
- National Science Foundation [ECCS-1254757, ECCS-1338012]
- Directorate For Engineering [1255494] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1254757] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [1255494] Funding Source: National Science Foundation
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The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro-5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10x increase in charge carrier mobility, from 0.17 +/- 0.19 cm(2) V(-1)s(-1) to 1.560.70 cm(2) V(-1)s(-1), when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance. (C) 2015 AIP Publishing LLC.
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