Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4922084
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Funding
- NSF/MRSEC through the Cornell Center for Materials Research, ONR [DMR-1120296]
- Samsung Electronics Corporation
- NSF [ECCS-0335765]
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We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of approximate to 0.5 nm layer of Hf between a Pt film and a thin, <= 2 nm, Fe60Co20B20 ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet's absorption of the SHE generated spin current. (C) 2015 AIP Publishing LLC.
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