Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4933304
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Funding
- Department of Science and Technology (DST), India [SB/S3/EECE/027/2013, IUSSTF/NIBIB_DST/ABPM/2014/EOI_34]
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In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 degrees C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8mol.% of boron concentration demonstrated field-effect mobility value of 1.2 cm(2) V-1 s(-1) and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs. (C) 2015 AIP Publishing LLC.
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