Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4929829
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Funding
- Deutscher Akademischer Austauschdienst (DAAD) [A/12/76203]
- Council of Scientific and industrial research (CSIR), India [09/086/(1013)/2010-EMR-I]
- Department of Electronics and Information Technology (DeitY)
- European Union within the Seventh Framework Programme [FP7] [280566]
- Project UnivSEM [227497]
- Project ROD-SOL
- DFG (German Research Society) within the research group Dynamics and Interactions of Semiconductor Nanowires for Optoelectronics [CH159/8]
- cluster of excellence Engineering of Advanced Materials - EAM at the Friedrich-Alexander Universitat Erlangen-Nurnberg, Germany
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Current-voltage (as a function of temperature), capacitance-voltage, and 1/f noise characteristics of Ni/GaN Schottky barrier diodes (SBDs) as function of rapid thermal annealing (RTA) are studied. It is found that RTA treatments of SBDs at 450 degrees C for 60 s resulted in a significant improvement of ideality factor and Schottky barrier height: the ideality factor decreased from 1.79 to 1.12 and the barrier height increased from 0.94 to 1.13 eV. The spectral power density of current fluctuations in the diode subjected to RTA at 450 degrees C is found to be two orders of magnitude lower as compared to the as-deposited diode. Improved diode characteristics and decreased 1/f noise in RTA treated (450 degrees C/60 s) diode are attributed to reduced level of barrier inhomogeneities at the metal-semiconductor interface and explained within the framework of the spatial inhomogeneity model. (C) 2015 AIP Publishing LLC.
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