Crystal growth kinetics in GeS2 amorphous thin films

The crystal growth kinetics of germanium disulfide in undercooled melts has been studied by optical microscopy under isothermal conditions. The linear growth kinetics of GeS2 has been observed in the temperature range 672 a parts per thousand currency sign T a parts per thousand currency sign 711 K in thin film samples. The activation energy of crystal growth assuming Arrhenius behavior has been determined as E (G) = 166 +/- A 8 kJ mol(-1) for thin film samples. From the dependence of reduced growth rate on undercooling, the interface driven 2-D surface nucleated model was estimated.