4.6 Article

Gate tunable monolayer MoS2/InP heterostructure solar cells

Journal

APPLIED PHYSICS LETTERS
Volume 107, Issue 15, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4933294

Keywords

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Funding

  1. National Natural Science Foundation of China [51202216, 61431014, 61171037, 61171038, 61376118]
  2. Special Foundation of Young Professor of Zhejiang University [2013QNA5007]
  3. Plan of Outstanding Young Teacher of Zhejiang University
  4. Postdoctoral Science Foundation of China [2014M561759]

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We demonstrate monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS2, we have designed the gate tunable MoS2/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS2 is effectively tuned, and the barrier height at the MoS,/hiP heterojunction correspondingly changes. The power conversion efficiency of MoS2/lnP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS2/InP heterostructure may be promising for highly efficient solar cells. (C) 2015 AIP Publishing LLC.

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