Journal
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
Volume 22, Issue 1, Pages 55-67Publisher
WILEY
DOI: 10.1002/jsid.211
Keywords
oxide semiconductor; thin-film transistor; channel-etched TFT; c-axis-aligned crystal (CAAC) structure; In-Ga-Zn oxide (IGZO)
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Our crystalline In-Ga-Zn oxide (IGZO) thin film has a c-axis-aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c-axis alignment, its a-axis and b-axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back-channel-etched thin-film transistor (TFT) using the CAAC-IGZO film. Using the CAAC-IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back-channel-etched TFTs.
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