Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4915262
Keywords
-
Categories
Funding
- ONR [N000141310214]
Ask authors/readers for more resources
The energy band alignment between atomic layer deposited (ALD) SiO2 and beta-Ga2O3 ((2) over bar 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available