Journal
JOURNAL OF THE ROYAL SOCIETY INTERFACE
Volume 6, Issue 37, Pages 719-733Publisher
ROYAL SOC
DOI: 10.1098/rsif.2008.0398
Keywords
adhesion; immunoFET; friction; silicon; AlGaN; heterojunction field-effect transistor sensors
Categories
Funding
- Program for Homeland Security of the Ohio State University [14525]
- National Science Foundation [60015533]
- [GRT00011123]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0756594] Funding Source: National Science Foundation
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Proteins on biomicroelectromechanical systems (BioMEMS) confer specific molecular functionalities. In planar FET sensors (field-effect transistors, a class of devices whose protein-sensing capabilities we demonstrated in physiological buffers), interfacial proteins are analyte receptors, determining sensor molecular recognition specificity. Receptors are bound to the FET through a polymeric interface, and gross disruption of interfaces that removes a large percentage of receptors or inactivates large fractions of them diminishes sensor sensitivity. Sensitivity is also determined by the distance between the bound analyte and the semiconductor. Consequently, differential properties of surface polymers are design parameters for FET sensors. We compare thickness, surface roughness, adhesion, friction and wear properties of silane polymer layers bound to oxides (SiO2 and Al2O3, as on AlGaN HFETs). We compare those properties of the film substrate pairs after an additional deposition of biotin and streptavidin. Adhesion between protein and device and interfacial friction properties affect FET reliability because these parameters affect wear resistance of interfaces to abrasive insult in vivo. Adhesion/friction determines the extent of stickage between the interface and tissue and interfacial resistance to mechanical damage. We document systematic, consistent differences in thickness and wear resistance of silane films that can be correlated with film chemistry and deposition procedures, providing guidance for rational interfacial design for planar AlGaN HFET sensors.
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