4.6 Article

Silicon-nitride photonic circuits interfaced with monolayer MoS2

Journal

APPLIED PHYSICS LETTERS
Volume 107, Issue 9, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4929779

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Funding

  1. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0012130]
  2. Institute for Sustainability and Energy at Northwestern (opto-electronic device integration)
  3. Argonne National Laboratory
  4. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
  5. U.S. Department of Energy (DOE) [DE-SC0012130] Funding Source: U.S. Department of Energy (DOE)

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We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range. (C) 2015 AIP Publishing LLC.

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