Journal
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
Volume 82, Issue 8, Pages -Publisher
PHYSICAL SOC JAPAN
DOI: 10.7566/JPSJ.82.084709
Keywords
polariton; photon lasing; semiconductor; microcavity; Bose-Einstein condensation
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Funding
- Japan Society for the Promotion of Science (JSPS) through its FIRST Program
- Japan Society for the Promotion of Science (JSPS) through its KAKENHI Grant [24740277, 25800181]
- Space and Naval Warfare Systems (SPAWAR) Grant [N66001-09-1-2024]
- Ministry of Education, Culture, Sports, Science and Technology (MEXT)
- State of Bavaria
- National Institute of Information and Communications Technology (NICT)
- joint studies program at the Institute for Molecular Science
- Grants-in-Aid for Scientific Research [25800181, 24740277] Funding Source: KAKEN
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Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be different from that with a standard photon lasing. In this paper, we report the temperature dependence of the change in photoluminescence with the excitation density. The second threshold behavior transited to the standard photon lasing is not measured at a low-temperature, high-excitation power regime. Our results suggest that there may still be an electron-hole pair at this regime to give a different photon lasing mechanism.
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