Journal
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
Volume 81, Issue 9, Pages -Publisher
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJ.81.093706
Keywords
semiconductor lasers; gain spectrum; Cooper pairs; Fano resonance; Hopf bifurcation
Categories
Funding
- JSPS through its FIRST Program
- [20104004]
- [20104008]
- Grants-in-Aid for Scientific Research [23360135, 20104004, 20104008] Funding Source: KAKEN
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A genuine many-body feature in semiconductor lasers is theoretically found in the gain spectra when a BCS-type (Bardeen-Cooper-Schrieffer) electron-hole (eh) pairing instability occurs during low-temperature operation. Owing to the finite dephasing time of eh pairs, an ultranarrow Fano-resonance gain between a bound eh pair and a continuum of unbound (plasma-like) eh pairs is found close to the phase-transition point. As a result, single-mode laser operation is strongly modified relative to the conventional laser operation using the Lorentzian-type eh plasma gain. Sharp Fano-resonance gain occurs owing to the Hopf bifurcation in the poles of the optical susceptibility.
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