Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4938570
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Funding
- Ministry of Science and Technology of Taiwan [MOST 104-2221-E-006-069-MY3, NSC 101-221-E-006-066-MY3, NSC102-3113-P-009-007-CC2]
- MOST of Taiwan [MOST 102-2682-M-006-001-MY3, MOST 103-2119-006-020]
- Asian Office of Aerospace Research and Development [AOARD-14-4012]
- Advanced Optoelectronic Technology Center
- National Cheng Kung University (of the Ministry of Education of Taiwan)
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [102-E0603]
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We have demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C-60) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH3NH3PbI3 perovskite and valance band level of ZnO. However, the CH3NH3PbI3 perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C-60 interlayer having matched conduction band level with ZnO and CH3NH3PbI3 perovskite added between the CH3NH3PbI3 perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH3NH3PbI3 perovskite layer. The short-circuit current density (JSC, 19.41mA/cm(2)) and open circuit voltage (V-OC, 0.91V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT: PSS)/perovskite/C60/RT sputtered ZnO/Al structure is higher than the JSC (16.23 mA/cm(2)) and V-OC (0.90V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C-60/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF%) than the SCs with the latter structure, its conversion efficiency eta% (10.93%) is higher than that (10.6%) of the latter. (C) 2015 AIP Publishing LLC.
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