Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4922732
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Funding
- Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea - Ministry of Science, the ICT and Future Planning (MSIP) [2011-0031643]
- Global Development Research Center
- Korea Institute for the Advancement of Technology (KIAT) - Ministry of Trade, Industry Energy (MOTIE) [N0000590]
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Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (similar to 1 x 10(11) cm(-3)) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 x 10(-4) Omega cm along the carrier concentration 5.6 x 10(20) cm(-3) is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors. (C) 2015 AIP Publishing LLC.
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