Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4913687
Keywords
-
Categories
Funding
- Science Foundation Ireland through AMBER
- European Community's Seventh Framework Programme IFOX [NMP3-LA-2010-246102]
- IRCSET
- [13/ERC/I2561]
- [11/SIRG/I2130]
Ask authors/readers for more resources
Spin-dependent transport properties of Mn2RuxGa thin-films are studied as function of the Ru concentration and the substrate-induced strain. The large spontaneous Hall angle of 7.7% twenty times bigger than in other 3d metals is a signature of its half-metallicity. The compensation temperature where the magnetization of the two inequivalent antiferromagnetically coupled Mn sublattices cancel can be tuned by varying x or the biaxial strain. This zero-moment half metal is free from demagnetizing forces and creates no stray field, effectively removing two obstacles to integrating magnetic elements in densely packed, nanometer-scale memory elements, and millimeter-wave generators. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available