4.1 Article

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 62, Issue 8, Pages 1176-1182

Publisher

KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.62.1176

Keywords

ZnSnO; Ga; Sol-gel; TFTs

Funding

  1. Ministry of Knowledge Economy (MKE), Korea [10041808, 10041947]
  2. Ministry of Knowledge Economy (MKE), Korea, under the Korea Institute for Advancement of Technology (KIAT) through the Workforce Development Program in Strategic Technology
  3. Basic Science Research Program through the National Research Foundation of Korea (NRF)
  4. Ministry of Education, Science and Technology [2012011424]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [10041947] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigated the incorporation of Ga into zinc-tin-oxide (ZTO) thin-film transistors (TFTs) and assessed the TFTs' electrical and stability properties. The Ga-doped ZTO (ZTO:Ga) thin films were deposited on thermally oxidized silicon substrates by using a sol-gel technique. The Ga contents were varied from 1 to 20 atomic percent (at.%) while the Zn:Sn ratio was maintained at 1:1. The dependence of the ZTO:Ga thin films' structural properties on the Ga content was analyzed using Xray diffraction (XRD) spectra, scanning probe microscopy (SPM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectrophotometry. The field effect mobilities and the I (on) /I (off) ratios of the ZTO:Ga-TFTs were between 0.68 and 2.95 cm(2)Vs(-1)s(-1) and similar to 10(4) and similar to 10(6), respectively. At low Ga contents, the (< 10-at.%) TFTs displayed similar TFT parameters, but the 20-at.%-Ga TFT showed improved mobility and stability characteristics. Moreover, the 20-at.%-Ga thin film had a smoother surface and increased crystallinity than the low Ga-content samples did.

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