Versatile resistive switching (memristive) behavior in an ITO/ZRO2/AG sandwich fabricated using electrohydrodynamic printing

This brief demonstrates the promising feasibility of electrohydrodynamic (EHD) printing technology for the fabrication of a crossbar resistive switch (memristor) through the patterning of ITO as a bottom electrode and Ag as a top electrode. An ITO/ZrO2/Ag sandwich exhibiting reversible resistive switching (memristive) behavior has been demonstrated on a glass substrate. A physically layer-wise, electrical current-voltage (IV) characterization was done for the device fabricated using EHD printing. The device dimensions achieved in the current research were around 100 A mu m x 100 A mu m. The as-fabricated device showed a high ON/OFF ratio greater than 100000:1 with multiple operational voltages less than +/- 10 V. The measured retention time of the fabricated device was over 3 days. Results reveal that the current research work provides for the fabrication of a relatively low-cost memristive device with reversible resistive switching properties.