Non-selenization method using sputtering deposition with a CuSe2 target for CIGS thin film

A novel method is proposed to prepare polycrystalline Cu(In,Ga)Se-2 (CIGS) thin films by using a non-selenization method and a sputtering process with In, Ga and CuSe2 alloy targets. An annealing process in a furnace and rapid thermal annealing (RTA) at 400 A degrees C without any selenium-/sulfurcontaining gas formed CIGS chalcopyrite (112), (220)/(204), and (312)/(116) phases. The major electrical and optical properties of the annealed thin films were superior to the required or reported values with 2.33 x 10(3) S/cm conductivity, 4.43 x 10(20) cm(-3) carrier concentration, 34.30 cm(2)/Vs hole mobility, and 2.41 x 10(6) cm(-1) absorption coefficient.