Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 59, Issue 4, Pages 2770-2773Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.59.2770
Keywords
ZnO thin films; PLD; Photoluminescence
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Funding
- Korea Research Foundation
- Korean Government [KRF-2008-313-C00239]
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0005007]
- National Research Foundation of Korea [2010-0011939] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the structural and the optical properties of Zn(1-x)Li(x)O (x = 0.0, 0.02, 0.08, 0.12, 0.18) nanocrystalline thin films deposited on alpha-Al(2)O(3) substrates by using pulsed laser deposition. X-ray diffraction (XRD) analysis revealed that all the films were single phase and had a hexagonal wurtzite structure. The lattice constant increased gradually with increasing Li content. Atomic force microscopy (AFM) showed that the grain size of the films was approximately 20 - 30 nm. Optical absorption studies in the wavelength range 200 - 900 nm revealed an increase in the band gap of the Li-doped ZnO films from 3.19 to 3.41 eV. Photoluminescence (PL) spectroscopy of these films was carried out. The luminescence observed was attributed to defects in the nanocrystalline Li-doped ZnO films, and the PL intensity decreased with increasing Li content.
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