Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 57, Issue 4, Pages 902-906Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.57.902
Keywords
Strain memory; Non-180 degrees domain switching
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Funding
- [216357]
- [438]
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Using non-180 degrees domain-reorientation control, we propose the strain memory effect in ferroelectric ceramics. Electric fields with asymmetric amplitudes were applied to soft-type lead zirconate titanate (PZT) ceramics, and the strain hysteresis and the polarization loop were measured. The butterfly curve became asymmetric under an electric field with a particular asymmetric amplitude. The asymmetric butterfly curve had two stable strain states at zero electric field. Thus, the strain memory effect was realized as the difference between the two stable strain states. An XRD analysis was carried out to verify the contribution of the non-180 degrees domain reorientation to the strain memory effect. The non-180 degrees domain reorientation was determined as the intensity ratio of the (002) to the (200) peak. The strain memory determined from macroscopic strain measurements had a linear relationship to the non-180 degrees domain volume fraction. This result indicated the origin of the strain memory to be the non-180 degrees domain reorientation.
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