Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4914304
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Funding
- Global Frontier R&D Program by the Center for Advanced Soft Electronics - National Research Foundation under the Ministry of Science, ICT and Future Planning [2014M3A6A5060950]
- Global R&D program - KIAT [1415134409]
- Basic Research Fund of KIMM [SC1090]
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We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al2O3 ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al2O3 on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al2O3-passivated PbS film. We conclude that these electron transport channels in the AlxOy-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb2+ ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. (C) 2015 AIP Publishing LLC.
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