Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4913261
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- (JSPS) KAKENHI [26289090]
- Grants-in-Aid for Scientific Research [25249035, 26289090] Funding Source: KAKEN
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We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 degrees C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 mu m was clearly observed even at a small current density of 2.2 mu A/mu m. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified. (C) 2015 AIP Publishing LLC.
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