Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 34, Issue 5, Pages 1235-1242Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2013.11.043
Keywords
Doped ceria; Gadolinium oxide; Diffusion; Transmission electron microscopy (TEM); Crystal structure
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Thin Gd2O3 films with a thickness of about 150 nm were deposited by pulsed layer deposition on polycrystalline CeO2 substrates to study the structural evolution of the Ce1-xGdxO2-x/2 system with respect to phase formation and cation interdiffusion in the temperature range between 986 degrees C and 1270 degrees C. Transmission electron microscopy combined with quantitative energy dispersive X-ray spectroscopy was applied to study the microstructure and to obtain composition profiles across the Gd2O3/CeO2-interface. Gd2O3 was observed to occur in the bixbyite structure up to 1175 degrees C. The fluorite and the bixbyite phase are found at intermediate compositions without any indication for a miscibility gap. Interdiffusion coefficients were obtained from Gd2O3/CeO2-concentration profiles on the basis of the diffusion-couple solution of the diffusion equation. The activation enthalpy and frequency factor of the diffusion coefficient were derived assuming an Arrhenius-type behavior in the investigated temperature range. (C) 2013 Elsevier Ltd. All rights reserved.
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