Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 32, Issue 9, Pages 1989-1993Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2011.10.038
Keywords
Fibres; Electron microscopy; Oxynitrides; Defects
Categories
Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan [19053001, 22015001]
- Japan Society for the Promotion of Science (JSPS) [236551388]
- MEXT of Japan [B01]
- Grants-in-Aid for Scientific Research [22015001, 19053003, 23656395, 23655188, 24760533] Funding Source: KAKEN
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The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 mu m but they did not grow laterally when the ammonia flow rate was 50 mL/min. (C) 2011 Elsevier Ltd. All rights reserved.
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