Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 11, Pages H1161-H1165Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.056111jes
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Funding
- National Science Council of Taiwan [952120M007004]
- National Tsing Hua University [97N2558E1]
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Development of better diffusion barriers for Cu metallization is one of the key issues for the microelectronics industry. Although metallic diffusion barriers offer many advantages, their application is hindered due to their inferior thermal stability relative to ceramic barriers. Here we report on a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barriers. The outstanding performance of NbSiTaTiZr is due to its better structural and chemical stability at high temperatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.056111jes] All rights reserved.
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