Related references
Note: Only part of the references are listed.Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
Zhe Wu et al.
APPLIED PHYSICS LETTERS (2010)
Phase transitions in Ge-Te phase change materials studied by time-resolved x-ray diffraction
Simone Raoux et al.
APPLIED PHYSICS LETTERS (2009)
Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio
Jeung-Hyun Jeong et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Vibrational properties of crystalline Sb2Te3 from first principles
G. C. Sosso et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2009)
Optical properties of pseudobinary GeTe, Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Sb2Te3 from ellipsometry and density functional theory
Jun-Woo Park et al.
PHYSICAL REVIEW B (2009)
Analyzing residual stress in bilayer chalcogenide Ge2Se3/SnTe films
Archana Devasia et al.
THIN SOLID FILMS (2009)
Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry
Jun-Woo Park et al.
APPLIED PHYSICS LETTERS (2008)
Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications
Kyung-Min Chung et al.
JOURNAL OF APPLIED PHYSICS (2008)
Resonant bonding in crystalline phase-change materials
Kostiantyn Shportko et al.
NATURE MATERIALS (2008)
Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films
E. Prokhorov et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2007)
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
K. S. Andrikopoulos et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2007)
Crystal structure and atomic arrangement of δ-phase Sb-Te binary alloy
C. W. Sun et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68≤x≤1)
Rudiger Schmidt-Grund et al.
JOURNAL OF APPLIED PHYSICS (2006)
Extremely long period-stacking structure in the Sb-Te binary system
K Kifune et al.
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE (2005)
Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases -: art. no. 093509
BS Lee et al.
JOURNAL OF APPLIED PHYSICS (2005)
Low-cost and nanoscale non-volatile memory concept for future silicon chips
MHR Lankhorst et al.
NATURE MATERIALS (2005)
Crystallographic studies on high-speed phase-change materials used for rewritable optical recording disks
T Matsunaga et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2004)
Share Paper
