4.6 Article

Electronic Properties of Silicene: Insights from First-Principles Modeling

Journal

JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 2, Pages H107-H110

Publisher

ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3522774

Keywords

-

Ask authors/readers for more resources

The electronic properties of two dimensional hexagonal silicon (silicene) are investigated using first-principles simulations. Though silicene is predicted to be a gapless semiconductor due to the sp(2)-hybridization of the Si atoms, the weak overlapping between their 3p(z) orbitals leads to a very reactive surface, resulting in a more energetically stable semiconducting surface upon the adsorption of foreign chemical species. It is predicted that silicene inserted into a graphitelike lattice, such as ultrathin AlN stacks, preserves its sp(2)-hydridization and hence its graphenelike electronic properties. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3522774] All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available