Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 4, Pages G88-G91Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3552663
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Funding
- Dutch Technology Foundation STW
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The influence of ions and photons during remote plasma atomic layer deposition (ALD) of metal oxide thin films was investigated for different O(2) gas pressures and plasma powers. The ions have kinetic energies of <= 35 eV and fluxes of similar to 10(12) 10(14) cm(-2) s(-1) toward the substrate surface: low enough to prevent substantial ion-induced film damage, but sufficiently large to potentially stimulate the ALD surface reactions. It is further demonstrated that 9.5 eV vacuum ultraviolet photons, present in the plasma, can degrade the electrical performance of electronic structures with ALD synthesized metal oxide films. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3552663] All rights reserved.
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