Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 2, Pages K30-K33Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3264650
Keywords
II-VI semiconductors; nanofabrication; nanowires; photodetectors; semiconductor growth; semiconductor quantum wires; ultraviolet detectors; wide band gap semiconductors; zinc compounds
Funding
- Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan [D97-2700]
- Advanced Optoelectronic Technology Center, National Cheng Kung University
- Ministry of Education
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We report the fabrication of a lateral ZnO nanowire UV photodetector on a glass substrate using tungsten as the growth barrier to suppress the vertical growth of the ZnO nanowires. Upon UV illumination, the detector current increased by more than 1 order of magnitude. Furthermore, the noise equivalent power and the normalized detectivity D(*) of the fabricated lateral ZnO nanowire photodetector were 7.89x10(-11) W and 1.9x10(8) cm Hz(0.5) W(-1), respectively.
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