Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4907326
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Funding
- National Science Foundation [IIP-1346307]
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1346307] Funding Source: National Science Foundation
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Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm(2) at 300K with a lasing wavelength near 3.2 mu m. The implications and prospects of these initial results are discussed. (C) 2015 AIP Publishing LLC.
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