Related references
Note: Only part of the references are listed.
Article
Engineering, Electrical & Electronic
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
Koen Martens et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Article
Engineering, Electrical & Electronic
Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric
Y. Xuan et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Article
Physics, Applied
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
Guy Brammertz et al.
APPLIED PHYSICS LETTERS (2007)
Share Paper
