Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO3)-Insulator (HfO2)-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

Metal-ferroelectric-insulator-semiconductor structures with BiFeO3 as the ferroelectric layer and hafnium oxide (HfO2) as the insulator layer were fabricated and characterized. The size of memory window as a function of HfO2 thickness was discussed. From the X-ray photoelectron spectroscopy results, it was suggested that the volatile bismuth loss reduces with increasing the addition of oxygen during sputtering. The leakage current with respect to the binding energies of Fe2+ and Fe3+ states due to oxygen vacancies was studied. The endurance property shows that there was no deterioration after 10(9) cycles with the oxygen-rich condition. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2994630] All rights reserved.