Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4908123
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Funding
- Program Inter Carnot Fraunhofer (PICF 10) by BMBF [01SF0804]
- ANR
- J. E. Purkyne fellowship by Academy of Sciences of the Czech Republic
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Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with different p-body acceptor concentrations were characterized by Hall effect. Normally OFF MOSFETs with good transfer characteristics and low threshold voltage were obtained with a peak mobility of similar to 145 cm(2) V-1 s(-1) for the lowest acceptor concentration. The results are explained in terms of an increase of Coulomb scattering centers when increasing the background doping. These scattering centers are associated to fixed oxide and trapped interface charges. Additionally, the observed mobility improvement is not related to a decrease of the interface states density as a function of background doping. (C) 2015 AIP Publishing LLC.
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