Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4937271
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Funding
- National Fundamental Research Program of China [2011CBA00200]
- National Natural Science Foundation [61306150, 11304301, 11575172, 91421303]
- Chinese Academy of Sciences
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To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 mu eV in the shallow-etched quantum dot and 3 mu eV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction. (C) 2015 AIP Publishing LLC.
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