Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4931567
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Funding
- JSPS KAKENHI Grant [26870300, 15H05702, 26289229]
- Grants-in-Aid for Scientific Research [26103002, 26870300, 26289229] Funding Source: KAKEN
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B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Neel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices. (C) 2015 AIP Publishing LLC.
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