Related references
Note: Only part of the references are listed.Mid-Infrared Interband Cascade Photodetectors With Different Absorber Designs
Zhao-Bing Tian et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2015)
Dark current in antimony-based mid-infrared interband cascade infrared photodetectors
Z. -B. Tian et al.
INFRARED PHYSICS & TECHNOLOGY (2015)
Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors
Zhao-Bing Tian et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Growth and characterization of ≥6 epitaxy-ready GaSb substrates for use in large area infrared imaging applications
M. J. Furlong et al.
INFRARED TECHNOLOGY AND APPLICATIONS XLI (2015)
High operating temperature interband cascade focal plane arrays
Z. -B. Tian et al.
APPLIED PHYSICS LETTERS (2014)
Influence of composition in InAs/GaSb type-II superlattices on their optical properties
Z. -B. Tian et al.
ELECTRONICS LETTERS (2014)
Electron barrier study of mid-wave infrared interband cascade photodetectors
Z. -B. Tian et al.
APPLIED PHYSICS LETTERS (2013)
Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers
Z. Tian et al.
JOURNAL OF APPLIED PHYSICS (2012)
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array
Wei Zhou et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2012)
Interband-cascade infrared photodetectors with superlattice absorbers
Rui Q. Yang et al.
JOURNAL OF APPLIED PHYSICS (2010)
Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
Binh-Minh Nguyen et al.
APPLIED PHYSICS LETTERS (2009)
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90A° Misfit Dislocations
A. Jallipalli et al.
NANOSCALE RESEARCH LETTERS (2009)
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang et al.
APPLIED PHYSICS LETTERS (2006)