Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4933093
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Funding
- DARPA through ARMY MIPR [HR0011515481]
- U.S. Army Research Office Grant [W911NF-14-1-0563]
- AFOSR MURI [FA9550-15-1-0029]
- Packard Foundation
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We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system. (C) 2015 AIP Publishing LLC.
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