4.6 Article

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Journal

APPLIED PHYSICS LETTERS
Volume 107, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4933093

Keywords

-

Funding

  1. DARPA through ARMY MIPR [HR0011515481]
  2. U.S. Army Research Office Grant [W911NF-14-1-0563]
  3. AFOSR MURI [FA9550-15-1-0029]
  4. Packard Foundation

Ask authors/readers for more resources

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system. (C) 2015 AIP Publishing LLC.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available